Publication | Closed Access
On-Wafer Measurement of Transistor Noise Parameters at NIST
31
Citations
7
References
2007
Year
Electrical EngineeringEngineeringTransistor Noise ParametersRf SemiconductorMeasurementCalibrationElectronic EngineeringBias Temperature InstabilityApplied PhysicsReflective TransistorNoiseEducationInstrumentationMicroelectronicsHigh-frequency MeasurementMeasurement Method
The National Institute of Standards and Technology has developed the capability to measure noise parameters on a wafer in the 1-12.4-GHz range. The authors describe the measurement method and the uncertainty analysis and present results of measurements on a highly reflective transistor. Typical standard uncertainties are within the range of 20-25 K in T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> , which is the minimum transistor noise temperature, and about 0.03 in the magnitude of Gamma <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">opt</sub> , which is the reflection coefficient for which T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> occurs
| Year | Citations | |
|---|---|---|
Page 1
Page 1