Physical and electrical characterization of ALCVD™ TiN and WNxCy used as a copper diffusion barrier in dual damascene backend structures (08.2) - Concepedia

Concepedia

Publication | Closed Access

Physical and electrical characterization of ALCVD™ TiN and WNxCy used as a copper diffusion barrier in dual damascene backend structures (08.2)

28

Citations

0

References

2002

Year

S. E. Smith, Weimin Li, Kai‐Erik Elers, Klaus Pfeifer

Microelectronic Engineering

Materials EngineeringMaterials ScienceElectrical EngineeringAluminium NitrideEngineeringCopper Diffusion BarrierSurface ScienceApplied PhysicsElectrical CharacterizationThin FilmsAlcvd™ TinChemical Vapor Deposition

No additional data available for this publication yet. Check back later!