Growth of Epitaxial-Like (Sr_0.5Ba_0.5)Nb₂O₆ Ferroelectric Films

Abstract

Epitaxial-like (Sr 0.5 Ba 0.5 )Nb 2 O 6 (SBN) films were successfully grown on (100) silicon substrates, using [002] CeO 2 as the buffer layer and [00 l ] YBa 2 Cu 3 O 7- x (YBCO) as the base electrode. The θ-2θ scan and φ-scan X-ray diffraction suggest that [210] SBN || [100] YBCO || [110]CeO 2 || [110] Si . The ferroelectric hysteresis curves measured by the modified Sawyer-Tower technique show that the epitaxial-like SBN/YBCO/CeO 2 /Si films possess substantially better ferroelectricity than the polycrystalline SBN/Pt(Ti)/Si films. The remanent polarization ( P r ) and coercive field ( E c ) are, respectively, P r =27.2 µ C/cm 2 and E c =24.8 kV/cm.