Borrmann effect in elastically bent silicon crystals with structural defects

Abstract

The Borrmann effect peculiarities in elastically bent silicon crystals containing structural defects appearing as a result of decay of oxygen solid solution are investigated by means of a double-crystal spectrometer. Linearity of the thickness dependences of the integral intensity logarithms In IR = f(t) at fixed level of elastic strain ϵ is established in such samples. This fact allows to determine the most important parameters μi and α describing respectively the absorption and scattering of intensity IR in an elastically bent crystal. The effect of non-additive influence of the localized and distributed distortions of lattice periodicity as well as the sensibility attenuation of IR to elastic strain in real samples with respect to perfect crystals are explained on the basis of decreasing of the effective volume scattering the radiation dynamically. [Russian Text Ignored]