High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications

Abstract

A novel technology for manufacturing high-performance hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) is developed in this letter. In the bottom gate light-shield a-Si:H TFT structure, the side edge of a-Si:H island is capped with extra deposition of heavily phosphorous-doped a-Si layer. Such an ingenuity can effectively eliminate the leakage path between the parasitic contacts of source/drain metal and the sidewall of a-Si:H island edge. In addition, electrical performance of the novel a-Si:H TFT device exhibits superior effective carrier mobility as high as 1.05 cm/sup 2//Vs, due to the enormous improvement in parasitic resistance. The impressively high performance of the proposed a-Si:H TFT provides the potential to apply foractive matrix liquid crystal display and active matrix organic light-emitting diode technology.