EngineeringElectrical EngineeringManufacturing EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsIntegrated Circuit DesignIntegrated Circuit DevicesIntegrated Circuit FabricationInterconnect TechnologySemiconductor PhysicsHeterojunction Bipolar TransistorsHeterojunction DevicesHeterojunctionsHeterostructure TransistorsHigh-speed Circuit DesignMetal Interconnect Scaling
The need for higher performance electronics for space and defense applications has driven the development of InP heterojunction technologies. An advanced high-speed sub-micron InP double heterojunction bipolar transistor (DHBT) technology, using a 4-level front side metal interconnect along with a robust backside process has been developed to provide scaling and manufacturing capabilities for mixed-signal and digital applications of increased complexity. State-of-the-art circuits with significant improvements in resolution and bandwidth are reported.
7
Analog circuits in ultra-deep-submicron CMOS
Anne-Johan Annema, Bram Nauta, R. van Langevelde et al. · IEEE Journal of Solid-State Circuits · 2005 · 421 citations · Full text
Frequency Limits of InP-based Integrated Circuits
M.J.W. Rodwell, Erik Lind, Zach Griffith et al. · 2007 · 19 citations
An Ultra-Wideband 7-Bit 5 Gsps ADC Implemented in Submicron InP HBT Technology