High-Speed InP HBT Technology for Advanced Mixed-signal and Digital Applications

Abstract

The need for higher performance electronics for space and defense applications has driven the development of InP heterojunction technologies. An advanced high-speed sub-micron InP double heterojunction bipolar transistor (DHBT) technology, using a 4-level front side metal interconnect along with a robust backside process has been developed to provide scaling and manufacturing capabilities for mixed-signal and digital applications of increased complexity. State-of-the-art circuits with significant improvements in resolution and bandwidth are reported.