E. Kaneshiro - Concepedia

Author

E. Kaneshiro

Northrop Grumman (United States)

Also Known As

E. Kaneshiro, E. N. Kaneshiro, E.N. Kaneshiro, ERIC N. KANESHIRO, Eric Kaneshiro, Eric N. Kaneshiro

Publications

430

Citations

H-Index

Concepts

All Affiliations

Northrop Grumman (United States)

About

E. Kaneshiro is an author at Northrop Grumman (United States) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	11	277
2	Electrical Engineering	10	11	277
3	Applied Physics	5	5	145
4	Computer Engineering	3	3	62
5	Materials Engineering	1	1	20

E. Kaneshiro

Publications

277

Citations

H-Index

Page 1

	Year	Citations
Ultrahigh-speed direct digital synthesizer using InP DHBT technology A. Gutierrez-Aitken, JAMES H. MATSUI, E. Kaneshiro, IEEE Journal of Solid-State Circuits Electrical EngineeringEngineeringRadio FrequencyDirect Digital SynthesisHigh-frequency Device	2002	67
Ultrahigh-efficiency power amplifier for space radar applications T. Quach, Paul Watson, W. Okamura, IEEE Journal of Solid-State Circuits RadarFrequency BandElectrical EngineeringEngineeringRadio Frequency	2002	37
An 18-21 GHz InP DHBT linear microwave Doherty amplifier K.W. Kobayashi, A.K. Oki, A. Gutierrez-Aitken, Electrical EngineeringEngineeringRf SemiconductorSuperior LinearityDoherty Amplifier	2002	26
High performance, high yield InP DHBT production process for 40 Gbps applications D. Sawdai, E. Kaneshiro, A. Gutierrez-Aitken, Electrical EngineeringEngineeringVlsi DesignGbps ApplicationsHigh-speed Digital Logic	2002	25
Advanced Heterogeneous Integration of InP HBT and CMOS Si Technologies A. Gutierrez-Aitken, Patty Chang-Chien, D. Scott, EngineeringDevice IntegrationComputer ArchitectureCmos Si TechnologiesInterconnect (Integrated Circuits)	2010	21
A Meeting of Materials: Integrating Diverse Semiconductor Technologies for Improved Performance at Lower Cost A. Gutierrez-Aitken, Bryan Yi-Cheng Wu, D. Scott, IEEE Microwave Magazine Dahi ApproachEngineeringGan HemtSemiconductor MaterialsIntegrated Circuits	2017	20
A 0.25 $\mu$m InP DHBT 200 GHz+ Static Frequency Divider M. D'Amore, C. Monier, Steven Lin, IEEE Journal of Solid-State Circuits Low-power ElectronicsInp Dhbt 200Electrical EngineeringMillimeter Wave TechnologyEngineering	2010	19
69 GHz frequency divider with a cantilevered base InP DHBT A. Gutierrez-Aitken, E. Kaneshiro, Bingjun Tang, Electrical EngineeringEngineeringRf SemiconductorGhz Frequency DividerDigital Frequency Divider	2003	19
High-Speed InP HBT Technology for Advanced Mixed-signal and Digital Applications C. Monier, D. Scott, M. D'Amore, EngineeringInterconnect (Integrated Circuits)Semiconductor DeviceElectromagnetic CompatibilityRf Semiconductor	2007	18
Diverse Accessible Heterogeneous Integration (DAHI) at Northrop Grumman Aerospace Systems (NGAS) A. Gutierrez-Aitken, Kelly Hennig, D. Scott, Wide-bandgap SemiconductorEngineeringAerospace SystemSystem IntegrationAerospace Systems	2014	15

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