Publication | Closed Access
An InP/InGaAs p-i-n/HBT monolithic transimpedance photoreceiver
31
Citations
6
References
1990
Year
Optical MaterialsEngineeringOptoelectronic DevicesIntegrated CircuitsOptoelectronic Integrated CircuitPhotoelectric SensorPhotodetectorsOptical PropertiesInp/ingaas HeterostructuresPhotonic Integrated CircuitOptical CommunicationPhotonicsElectrical EngineeringOptoelectronic MaterialsPhotoelectric MeasurementApplied PhysicsOptoelectronicsOptical Devices-26.1 Dbm
A monolithically integrated 1-Gb/s p-i-n/HBT transimpedance photoreceiver is discussed. The optoelectronic integrated circuit (OEIC) was made from metalorganic vapor-phase epitaxy (MOVPE)-grown InP/InGaAs heterostructures and had a transimpedance of 1375 Omega , a sensitivity of -26.1 dBm, >25-dB dynamic range, and a 500-MHz bandwidth.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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