High-efficiency polymer light-emitting diodes based on poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] with plasma-polymerized CHF3-modified indium tin oxide as an anode

Abstract

We demonstrate that introducing a thin CFx film formed by plasma polymerization of CHF3 on an indium tin oxide (ITO) anode surface for a polymer light-emitting diode with the structure, ITO∕CFx∕poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene](MEH-PPV)∕Ca∕Al, can lead to a high device performance (5.1cd∕A and 24000cd∕m2). The high device performance can be attributed to a better balance between hole and electron fluxes, resulting from a formation of interfacial dipole at the CFx∕MEH-PPV interface to provide a hole blocking effect and an enhancement of electron/hole recombination.