EPITAXIAL GROWTH OF Bi-SUBSTITUTED YTTRIUM IRON GARNET FILMS BY ION BEAM SPUTTERING

Abstract

Highly bismuth-substituted films of yttrium iron garnet were epitaxially grown during deposition for the first time by reactive ion beam sputter-deposition method. It was revealed that substrate temperature and oxygen partial pressure were the key parameters for the epitaxial growth during deposition. Epitaxial growth was observed in the films deposited from the same composition of target onto different substrates of single-crystal garnets with lattice constant ranging from 12.383 to 12.509 Å.