Journal of The Electrochemical Society · 1976 · 15 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesLuminescent MaterialsOptoelectronic DevicesOptoelectronic MaterialsQuantum OptoelectronicsRare-earth-doped MaterialsBand GapCarrier DiffusionExternal Quantum EfficiencyLed LightingLight-emitting DevicesLight-emitting Diode MaterialsQuantum EfficiencySemiconductor Light-emitting Materials
Improvement in the minority carrier diffusion lengths has been obtained in LED's by controlling the oxygen contamination during LPE with getter dopants such as Al, Mg, or Si. Experimental data are presented which show a limited range in which one can achieve oxygen gettering in without reducing the incorporation of nitrogen. Excess Al produces free exciton emission with an external quantum efficiency of 0.02% at 4 A/cm2.