Semiconductor Electrodes: XI . Behavior of n‐ and p‐Type Single Crystal Semconductors Covered with Thin Films

Abstract

Single crystal semiconductors (n‐Si, p‐Si, , , , , and ) were coated with n‐type by a chemical vapor deposition technique, and the electron and hole transfer properties across the heterojunction so produced were investigated. The quality of the deposited film depended upon several factors including temperature and substrate material. When high quality crack‐free coats were obtained on n‐type substrates, the substrate was stabilized with no dissolution during the photo‐oxidation of water. However, the oxidation was due only to the photoexcitation of the, and any holes produced in the substrate were not transferred through the to the solution. The use of p‐type substrates coated with as photocathodes was limited by band‐bending requirements at the p‐n heterojunction and the interface.