IEEE Journal of Solid-State Circuits · 1979 · 15 citations · 3 references
EngineeringComputer EngineeringElectrical EngineeringComputer ArchitectureMicroelectronicsSemiconductor DevicesCmos Circuit DesignMemory DevicesMemory Subsystem DesignMemory Circuit DesignStatic Random-access MemoryStatic Random-access Memory Design
A new CMOS/SOS `buried-contact' process allows fabrication of dense static memory cells. The technology is applied in a 16K RAM with 1150 /spl mu/m/SUP 2/ (1.78 mil/SUP 2/) cells based on 5 /spl mu/m design rules.
3
A New Physical Mechanism for Soft Errors in Dynamic Memories
T.C. May, M. H. Woods · Reliability physics · 1978 · 228 citations
V. McKenny · 1977 · 13 citations
Engineering, Computer Engineering, Electrical Engineering +14