Millimeter-Wave Reflective-Type Phase Shifter in CMOS Technology

Abstract

The design and measurement of a compact, wide-band reflective-type phase shifter in 90 nm CMOS technology in V-band frequency is presented. This phase shifter has a fractional bandwidth of 26% and an average insertion loss of 6 dB over all phase states. The chip area is only 0.08 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Measurement results show that the developed phase shifter provides 90 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> continuous phase shift over the frequency range of 50-65 GHz. The measured return loss is greater than 12 dB at 50 GHz. The output power is linear up to at least 4 dBm input power.