An 80GHz travelling-wave amplifier in a 90nm CMOS technology

Abstract

A 6-stage travelling wave amplifier (TWA) implemented in a bulk 90nm CMOS technology is presented. By utilizing gate-line capacitive division and low-loss coplanar waveguides, the fabricated TWA exhibits 7.4dB gain with a 3dB bandwidth of 80GHz while maintaining input and output return losses better than 8dB from dc to 100GHz. A GBW of 190GHz is achieved.