2002 · 36 citations · 7 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsMicrowave EngineeringHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesPower AmplifiersWaveguidesHigh-gain AmplifiersMaximum OutputMaximum Power OutputMicrowave Amplifier DesignPower Amplifier DesignPower OutputPower Output OptimizationRadio Frequency Power Amplifiers
In this paper, we present two MMIC power amplifier designs utilizing InP HEMT technology. The first amplifier covers two full waveguide bands, WR10 (75-110 GHz) and WR8 (90-140 GHz), yielding a maximum output power of at least 25 mW between 65-140 GHz. The second design is optimized for the WR10 waveguide band and provides at least 13 dB of large signal gain over 75-110 GHz, and an output power of 40-50 mW.
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A 427 mW, 20% compact W-band InP HEMT MMIC power amplifier
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High performance MMICs with submillimeter wave InP-based HEMTs
C.W. Pobanz, M. Matloubian, V. Radisic et al. · 2002 · 18 citations
On-Wafer Testing of Circuits Through 220 GHz
T. Gaier, Lorene Samoska, Charles Oleson et al. · 1999 · 17 citations · Full text