Si 2p XPS spectrum of the hydrogen‐terminated (100) surface of device‐quality silicon

Abstract

Abstract An experimental study of the Si 2p XPS spectrum at different take‐off angles of atomically flat, hydrogen‐terminated 1 × 1 Si(100) is reported. The observed spectrum can be described accurately by considering three additional contributions to the spectrum of elemental silicon. Each contribution is attributed to a chemical state of silicon on the basis of its chemical shift with respect to elemental silicon and the depth of the region where it was originated. Copyright © 2003 John Wiley & Sons, Ltd.