Strained InGaAs quantum well lasers grown on (111)B GaAs

Abstract

The growth by molecular beam epitaxy (MBE) of AlGaAs/GaAs/InGaAs strained quantum well lasers on GaAs (111)B substrates is reported. An excellent transparency current density J0 of 190 A/cm2 and an internal loss αi of 11cm-1, were obtained on broad area lasers, which are potential surface emitting blue-green light sources.