Carrier‐density dependence of the hole mobility in doped and undoped regioregular poly(3‐hexylthiophene)

Abstract

Abstract We investigate the mobility of poly(3‐hexylthiophene) (P3HT) over a carrier‐density range from 10 15 to 10 20 cm −3 . Hole‐only diodes were used for densities below 10 16 cm −3 and field‐effect transistors were used for carrier densities higher than 10 18 cm −3 . To fill the gap, intermediate densities were probed using chemically doped Schottky diodes and transistors. Combining of the mobilities in doped and undoped devices experimentally establishes the full relation of the mobility over the whole carrier‐density range.