Total dose radiation response and high temperature imprint characteristics of chalcogenide based RAM resistor elements

Abstract

Chalcogenide thin film resistor elements are being integrated with CMOS structures for nonvolatile memory applications. This paper reports on the first total dose and imprint data published on this new technology demonstrating no observable effects on chalcogenide films after exposure to 1 Mrad(Si) and 125/spl deg/C temperature.