IEEE Transactions on Nuclear Science · 2000 · 64 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationMemory DevicesMemristive MaterialsSemiconductor Device MaterialsSemiconductor ReliabilityThin Film Electrical PropertiesChalcogenide Thin FilmsDose ResponseImprint EffectNonvolatile MemoryNonvolatile Memory DevicesNonvolatile Memory MaterialsRadiation Dose EffectsTotal Dose
Chalcogenide thin film resistor elements are being integrated with CMOS structures for nonvolatile memory applications. This paper reports on the first total dose and imprint data published on this new technology demonstrating no observable effects on chalcogenide films after exposure to 1 Mrad(Si) and 125/spl deg/C temperature.
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Nonvolatile, high density, high performance phase-change memory
Scott Tyson, Guy Wicker, T. Lowrey et al. · 2002 · 64 citations
Engineering, Computer Engineering, Electrical Engineering +15
Radiation Hardness of Ovonic Devices
Stanford R. Ovshinsky, E.J. Evans, David L. Nelson et al. · IEEE Transactions on Nuclear Science · 1968 · 60 citations
Engineering, Electrical Engineering, Nuclear Engineering +15