A two-dimensional DFB laser model accounting for carrier transport effects

Abstract

A two-dimensional numerical model for DFB semiconductor laser simulation is developed and presented. In this model the transverse carrier transport and longitudinal spatial/spectral hole-burning effects in a bulk DFB laser are accounted for rigorously. Comparison with simplified models is made. Methods for improving the accuracy of steady-state and small-signal analyses by the simplified models are proposed and verified.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>