Resonant tunneling quantum-dot diodes: physics, limitations, and technological prospects

Abstract

The authors discuss the electronic structure and properties of the present generation of resonant-tunneling quantum-dot structures. Quantum dots are zero-dimensional semiconductor nanostructures, i.e., structures in which an electron is quantum-mechanically confined in all three spatial dimensions. Quantum dots appear to represent a viable structure to allow the continued downscaling of critical circuit geometries beyond the currently perceived limits for conventional VLSI devices. As they are currently fabricated, however, quantum-dot diodes have impediments which prevent the full realization of their potential. The authors assess these limitations and discuss measures for their solution.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>