A small GSM power amplifier module using Si-LDMOS driver MMIC

Abstract

A small quad-band Si-MOS high power amplifier module with a package size of 8x8 mm/sup 2/ includes a driver MMIC in an LDMOS process and provides a built-in power control loop employing a current sense method. The IC achieves 53% power efficiency at 35dBm output power over the 824 to 915MHz GSM band using a 3.6V supply.