Extracting physical IC models using near-field scanning

Abstract

Accurate modeling of chip and chip-package is critical for EMI (Electromagnetic Interference) and RFI (RF Interference) analysis and prediction. In this paper, a model based on an array of dipoles from near-field measurement is proposed. A simple active circuit is simulated in a 3-D full-wave simulation tool, and the dipole model is calculated from the near-field data in the simulation using inverse method with regularization technique. This model has clear physical meaning, and it is validated using field at other place.