Room temperature plasma oxidation: A new process for preparation of ultrathin layers of silicon oxide, and high dielectric constant materials - Concepedia

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Room temperature plasma oxidation: A new process for preparation of ultrathin layers of silicon oxide, and high dielectric constant materials

22

Citations

21

References

2005

Year

J. C. Tinoco, M. Estrada, H. Báez, A. Cerdeira

Thin Solid Films

Materials ScienceMaterials EngineeringEngineeringOxidation ResistanceOxide ElectronicsNonthermal PlasmaSurface ScienceApplied PhysicsNew ProcessSilicon OxideUltrathin LayersPlasma ProcessingSilicon On Insulator

References

	Year	Citations

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