Strain engineered InAs/GaAs quantum dots for 1.5 μm emitters

Abstract

We show that it is possible to obtain emission up to 1.5 μm from InAs/GaAs quantum dots using a combination of low growth rates, a seed layer, variable substrate temperature, and InGaAs capping. These strain engineered structures exhibit a remarkably small linewidth (14 meV) consistent with islands that are very uniform in both composition and size.