Gate drive considerations for IGBT modules

Abstract

The switching performance of an insulated gate bipolar transistor (IGBT) module depends on the drive circuit characteristics and external DC loop inductance. The authors discuss the influence of these parameters on switching losses, diode recovery, switching voltage transients, short-circuit operation, and d nu /dt induced current. The present work is tutorial and identifies trends. It is intended to help the circuit designer to apply the IGBT module to best advantage.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>