Acta Crystallographica Section A · 1976 · 21 citations · 1 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureElectronic MaterialsSemiconductor MaterialsElastic DeformationStrain AnalysisStrain EngineeringStress AnalysisStress-strain BehaviorX-ray DiffractionLattice StrainStrain EffectsStrain Effects On Electronic PropertiesThermomechanical StressUniaxial Strain
The effect of internal strain in the zincblende structure was examined on a GaAs single crystal by X-ray intensity measurements under a uniaxial stress along the [1{\bar 1}0] direction. It was found that the stress changes the structure factor of the weak reflexion (006), giving the value ζ = 0.764 ± 0.009 for the bond-bending constant.
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<i>International Tables for X-ray Crystallography</i>
Acta Crystallographica Section B · 1976 · 14.2K citations · Full text