IEEE Electron Device Letters · 1982 · 84 citations · 6 references
EngineeringElectrical EngineeringMaterials CharacterizationMicroelectronicsSemiconductor DevicesCurrent-voltage CharacteristicsDevice CharacterizationDevice ModelingElectrical CharacterizationShort-channel EffectsBiasesConductance-voltage RelationshipEquivalent Series ResistanceField-effect Transistor Transfer CharacteristicsGate-dependent Current-voltage BehaviorMosfet ModelingSemiconductor Device CharacterizationSeries Resistance
A method is described to electrically determine MOSFET channel length, mobility, gate-bias dependence and parasitic series resistance. These four quantities are obtained by curve fitting output resistance measurements over a range of gate biases and channel lengths. Measurements from two gate biases on each of two devices of different channel lengths are sufficient to obtain a full characterization. Thus, the method is well suited for automated testing because of its simplicity and efficiency.
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A new method to determine MOSFET channel length
Jenn-Gang Chern, Po‐Han Chang, R.F. Motta et al. · IEEE Electron Device Letters · 1980 · 312 citations