Chemical Bath Deposition of ZnSe and CuSe Thin Films Using N,N‐Dimethylselenourea

Abstract

Chemical bath deposition techniques for ZnSe and CuSe thin films using N,N-dimethylselenourea as the source of se]enide ion are presented. Films of 0.1 to 0.3 p.m in thickness of ZnSe and CuSe are obtained in 2 to 10 h depositions at 50 ~ The ZnSe films possess optical bandgap ~2.63 eV and suffer thermal degradation at temperatures>350 ~ They are very resistive, with sheet resistance ~10i~12/[ ~ (~0.3 ~m film, 10 h deposition). The CuSe films have sheet resistance ~103 ll/[:] (~0.13 ~m, 3 h deposition) but undergo thermal degradation at temperatures>200 ~ Structure, composition, optical, and electrical characteristics of the films are discussed. Metal chalcogenides are compound semiconductors which have found numerous applications in electronic and electro-optical devices. 1 Intensive research as been per-formed in the past decades to study the production and properties of thin film metal chalcogenides. These films can be obtained by a variety of techniques like vacuum evapo-ration, 2 sputtering, pyrolysis, and chemical deposition techniques. 3'4The latter techniques are relatively simple,