A 6.5kV IGBT module with very high safe operating area

Abstract

A new 6.5 kV IGBT module is presented. This module, using high voltage soft-punch-through technology exhibits an exceptionally high reverse bias safe operating area and withstands dynamic avalanche up to its rated voltage. This capability allows the module to be operated with a gate resistance 10 times lower than present generations of 6.5 kV modules of the same nominal rating, allowing fast turn-off and hence reduced turn-off losses. The chip technology is briefly described and detailed test results highlighting the smooth switching characteristics, extremely safe operating areas and high tolerance to stray inductance is presented. The importance of fast switching through low values of gate resistance is explained in terms of loss-reduction, gate-drive simplification and good dynamic current sharing between chips within the module.