Study of Carbon Nanotubes as Etching Masks and Related Applications in the Surface Modification of GaAs‐based Light‐Emitting Diodes

Abstract

The surface modification of LEDs based on GaAs is realized by super-aligned multiwalled carbon nanotube (SACNT) networks as etching masks. The surface morphology of SACNT networks is transferred to the GaAs. It is found that the light output power of LEDs based on GaAs with a nanostructured surface morphology is greatly enhanced with the electrical power unchanged.