Proton damage effects on p-channel CCDs

Abstract

An experimental batch of p-buried channel CCDs has been fabricated and characterised for proton-induced radiation damage. Dark current effects were similar to conventional n-channel CCDs, but radiation-induced changes in charge transfer inefficiency were reduced by approximately a factor 3 for -30/spl deg/C operation and background signal /spl sim/2000 electrons/pixel; though this is a lower limit and further reduction may be possible in future CCD batches.