Applied Physics Letters · 2007 · 30 citations · 12 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsAlloysHeat ConductionSemiconductor Device MaterialsThermal Properties Of MaterialsThermal Properties Of SemiconductorsThermoelectric MaterialsOpen-circuit VoltagePower DensityPower OutputThermoelectric Energy ConversionThermoelectric Figure Of MeritThermoelectric PropertiesThermoelectric SemiconductorsThermoelectric Transport
We report a wafer scale approach for the fabrication of 400 element power generator modules composed of 200 n-type ErAs:(InGaAs)0.8(InAlAs)0.2 and 200 p-type ErAs:InGaAs alloy thermoelectric elements. The thermoelectric properties of the materials were characterized. Two sets of generator modules with the element thicknesses of 20 and 10μm, respectively, were fabricated. The 20μm module had an output power density of 2.5W∕cm2 and 3.5V open circuit voltages, and the 10μm generator modules had an output power density of 1.12W∕cm2 and open circuit voltage of 2.1V. The performance of thermoelectric generator modules can further be improved by increasing the thicknesses of the elements and reducing the electrical and thermal parasitic resistances.
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Thin-film thermoelectric devices with high room-temperature figures of merit
R. Venkatasubramanian, E. Siivola, T.S. Colpitts et al. · Nature · 2001 · 5.2K citations
Natural Sciences, Materials Engineering, Materials Science +14
Minimum Thermal Conductivity of Superlattices
M. V. Simkin, G. D. Mahan · Physical Review Letters · 2000 · 509 citations · Full text