Nonlinear refraction in nanocrystalline silicon carbide films

Abstract

Nonlinear refraction in nanocrystalline SiC films, which have been obtained using the method of direct deposition of carbon and silicon ions with an energy of 100 eV at substrate temperatures from 900 to 1150°C, has been investigated. It has been shown that the films exhibit a large third-order nonlinear susceptibility χ (3) ∼ 10−6 esu (at λ = 1064 nm and τ p = 10 ns).