IEEE Photonics Technology Letters · 1992 · 100 citations · 9 references
Natural SciencesMaterials EngineeringMaterials ScienceOptical MaterialsOpticsOptoelectronicsOptical Properties Of MaterialsOptical Thin FilmsOptical WaveguidesOptoelectronic MaterialsRefractive IndexThin Film Optical PropertiesDispersion ModelOptical CharacterizationOptoelectronic PropertiesPhotoluminescenceRefractive Index DeterminationSuperlatticesThin-film Optical CharacterizationThin-film Refractive Index
Molecular beam epitaxy (MBE)-grown bulk and short-period superlattices of (Al,Ga,In)As epilayers lattice matched to InP were characterized by double-crystal diffractometry and low-temperature photoluminescence. A reflection spectroscopy technique was used to determine the refractive index of (Al,Ga,In)As films as a function of wavelength. The measured data were fitted to a single-oscillator dispersion model, and the model coefficients are given. The resulting expression can be used in the design of waveguides, modulators, and other optical devices.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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