Applied Optics · 1984 · 72 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceOpticsOptoelectronicsSemiconductor DevicesCoatingsLaser DiodesOptical Properties Of SemiconductorsOptical Thin FilmsOptoelectronic MaterialsSemiconductor LasersAnti-reflection CoatingsAntireflection CoatingsFacet CoatingsLasersOptical CoatingsSemiconductor Laser DiodesSi(pin) DetectorsSuperluminescent Diodes
Single‑layer antireflection coating films transform semiconductor injection lasers into various active devices, enabling zero‑reflectivity facets for superluminescent diodes or optical amplifiers, and are desirable for external‑cavity lasers and optical‑fiber sensor applications. The authors sputtered silicon nitride onto the emitting facets of InGaAsP lasers at 1.3 and 1.55 µm and AlGaAs lasers at 0.85 µm. The sputtered silicon nitride coatings achieved reflectivities of 0.01–0.03 % and, when applied to InGaAs PIN detectors, significantly increased responsivity.
Single-layer antireflection (AR) coating films are used to transform semiconductor injection lasers into different kinds of active device. For example, a laser whose emitting facet reflectivities (one or both) are reduced to zero is transformed into a superluminescent diode or an optical amplifier, respectively. AR coated lasers are also very desirable in various configurations of a laser in an external cavity or as sources for optical fiber sensor applications. High quality antireflection coatings of laser facets have been achieved using sputtered silicon nitride. The emitting facets of InGaAsP lasers at 1.3 and 1.55 μm as well as of AlGaAs lasers at 0.85 μm were coated. The reflectivities achieved were consistently in the 0.01–0.03% range. Similar films were also used to AR coat InGaAs PIN detectors thereby significantly increasing their responsivity.
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Coherent optical fiber transmission systems
Y. Yamamoto · IEEE Journal of Quantum Electronics · 1981 · 314 citations