IEEE Photonics Technology Letters · 2000 · 10 citations · 5 references
EngineeringSurgeryOncologic SurgeryPharyngeal SurgeryPhotonicsBeam SteeringIon ImplantationLaser DiodesHigh-power LasersHigh-power Semiconductor LasersIon Implantation EffectsIon OpticsLaser Beam SteeringMaximum Power OutputWaveguide Lasers
We demonstrate a kink and beam steering free operation of 0.98-μm GaInAs-GaInP high-power ridge waveguide (RW) lasers utilizing channel ion implantation. The ion-implanted regions along the both sides of the ridge effectively suppressed the excitation of higher order lateral modes, which causes beam steering and kink. The maximum power without beam steering and kink has been achieved over 250 mW for channel ion-implanted RW lasers with 1.8-3.7-μm ridge width, compared to 120-mW maximum power without the channel ion implantation.
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Beam instability in 980-nm power lasers: experiment and analysis
Jennifer L. Guthrie, G.L. Tan, M. Ohkubo et al. · IEEE Photonics Technology Letters · 1994 · 53 citations
Aluminum-free 980-nm GaInAs/GaInAsP/GaInP pump lasers
H. Asonen, A. Ovtchinnikov, Guodong Zhang et al. · IEEE Journal of Quantum Electronics · 1994 · 37 citations