A two-dimensional nonisothermal finite element simulation of laser diodes

G.L. Tan, N. Bewtra, K. Lee, +1

IEEE Journal of Quantum Electronics

Nonisothermal CaseSemiconductor Laser DeviceEngineeringLaser ScienceLaser Applications +19

Beam instability in 980-nm power lasers: experiment and analysis

Jennifer L. Guthrie, G.L. Tan, M. Ohkubo, +6

IEEE Photonics Technology Letters

EngineeringLaser ScienceWave OpticLaser PhysicsLaser Applications +18

Modeling of quantum-well lasers with electro-opto-thermal interaction

N. Bewtra, D.A. Suda, G.L. Tan, +2

IEEE Journal of Selected Topics in Quantum Electronics

Categoryquantum ElectronicsOptical Rate EquationsQuantum PhotonicsEngineeringLaser Science +21

Two-dimensional semiconductor device analysis based on new finite-element discretization employing the S-G scheme

G.L. Tan, Xueliang Yuan, Q.-M. Zhang, +2

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Numerical AnalysisNew Finite-element DiscretizationEngineeringMechanical EngineeringComputational Mechanics +19

Increased threshold for the first-order lateral mode lasing in low-ridge waveguide high power QW lasers

Mengmeng Xu, G.L. Tan, Rick D. Clayton, +1

IEEE Photonics Technology Letters

PhotonicsSelf-consistent Two-dimensional ModelEngineeringLaser ScienceApplied Physics +8

Ultra-high differential gain in GaInAs-AlGaInAs quantum wells: experiment and modeling

Mengmeng Xu, G.L. Tan, J.M. Xu, +5

IEEE Photonics Technology Letters

High Differential GainEngineeringLaser ScienceLaser ApplicationsTheoretical Gain Calculation +18

Third-order nonlinearity induced lateral-mode frequency locking and beam instability in the high-power operation of narrow-ridge semiconductor lasers

Xianwei Fu, G.L. Tan, Reuven Gordon, +1

IEEE Journal of Quantum Electronics

PhotonicsBeam SteeringThird-order NonlinearityEngineeringLaser Science +7

Effects of displaced p-n junction of heterojunction bipolar transistors

Q.M. Zhang, G.L. Tan, Wyatt Moore, +1

IEEE Transactions on Electron Devices

SemiconductorsSemiconductor TechnologyElectrical EngineeringNeutral BaseTwo-dimensional Simulations +6

Current gain and transit-time effects in HBTs with graded emitter and base regions

Q.M. Zhang, G.L. Tan, J.M. Xu, +1

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringHigh-speed Electronics +10