Status of the liquid-xenon-jet laser-plasma source for EUV lithography

Abstract

The liquid-xenon-jet laser-plasma source is one of the extreme-ultraviolet (EUV) source technologies under development for EUV lithography. This paper presents some recent improvements of the technology, including the ability to operate a stable plasma at a distance of 50 mm from the nozzle, the first positive mirror-lifetime results, and improved laser-to-EUV conversion efficiency of 0.75 percent at lambda equals 13.45 nm.