Optical, Electrical and Morphological Studies of SnSe₂ Crystals Grown by Physical Vapour Transport Method

Abstract

Abstract Tin diselenide single crystals have been grown by the physical vapour transport (PVT) method. Optical absorption studies give an indirect allowed transition at 1.03 eV at room temperature. The electrical resistivity parallel and perpendicular to c‐axis, mobility and carrier concentration have been determined. Dependence of resistivity parallel to c‐axis on temperature gives an activation energy of 0.072 eV. Growth spirals observed for the first time on the as grown faces of these crystals are also presented here.