Monte Carlo simulation of electron transport in strained Si/Si/sub 1-x/Ge/sub x/ n-MOSFETs

Abstract

Electron transport in the inversion layer of strained-silicon-channel n-MOSFETs is investigated using a Monte Carlo (MC) tool that takes into account the 2D nature of the electron gas. The subband structure is calculated using a bulk nonparabolic E-K relation, E(K)(1+/spl alpha/E(M))=/spl gamma//sub bulk/(K), where /spl alpha/ is the nonparabolicity coefficient. Single particle MC simulations are performed at room temperature by solving a 2D multi-subband BTE. The scattering mechanisms include phonon, surface roughness and alloy scattering. Agreement between calculated and experimental enhancement of effective mobility is presented.