CVD of MgO Thin Films from Bis(methylcyclopentadienyl) Magnesium

Abstract

Abstract Thin films of MgO are grown by CVD, with a high growth rate, on Si(001) and quartz substrates in the temperature range 400–550 °C, using bis(methylcyclopentadienyl)magnesium [Mg(CH 3 ‐C 5 H 4 ) 2 ] as the precursor. The films obtained are investigated by X‐ray diffraction (XRD), X‐ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and optical absorption, in order to investigate the interrelations between film properties and processing conditions. Cubic phase MgO (periclase) films, characterized by a low carbon contamination and a granular surface morphology, are obtained.