25 GHz MMIC oscillator fabricated using commercialSiGe-HBT process

Abstract

Monolithically integrated 17 and 25 GHz SiGe-HBT oscillators are presented. The monolithic microwave integrated circuits (MMICs) are fabricated using the commercially available TEMIC SiGe process. The oscillators deliver 8 dBm output power at 17 GHz and 1.2 dBm at 25 GHz with phase noise < –90 dBc/Hz at 100 kHz offset, which are record values for MMICs on low-resistivity silicon substrate.