24 to 79 GHz frequency band reconfigurable LNA

Abstract

A 24 to 79 GHz frequency-band reconfigurable low-noise amplifier (LNA) is presented, realised in an emerging RF-MEMS/BiCMOS technology. The technology implements shunt capacitive RF-MEMS switches realised in the standard metallisation layers of the BiCMOS process, thus enabling direct monolithic integration into the underlying active devices. The measurements of the realised LNA show very good performance in both bands, which are separated in frequency by a factor of three. These results demonstrate a high potential towards novel, highly flexible components for practical micro- and millimetre-wave systems.