Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays

Abstract

Recently, the sneak-path obstacle in passive crossbar arrays has been overcome by the invention of complementary resistive switches (CRSs) consisting of two bipolar antiserially connected memristive elements. Here, we demonstrate the vertical integration of CRS cells based on Cu/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Pt bipolar resistive switches. CRS cells were fabricated and electrically characterized, showing high resistance ratios (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> /R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> >; 1500) and fast switching speed (<; 120 μs). The results are one step further toward the realization of high-density passive nanocrossbar-array-based gigabit memory devices.