Circuit demonstration of radiation hardened chalcogenide non-volatile memory

Abstract

BAE SYSTEMS in Manassas, Virginia, and Ovonyx, Inc., have previously reported electrical test results fiom stand-alone single-bit chalcogenide memories. In this paper we present a description of two test chips, one that has been used to integrate the chalcogenide memory element with BAE SYSTEMS' radiation hardened 0.5 pm CMOS technology, and another to develop 64 kbit arrays with full write-read circuitry suitable for environmental and radiation testing. Electrical test results fiom these test chips will be presented showing full functionality.