Terahertz optically pumped Si:Sb laser

Abstract

Far-infrared stimulated emission from optically pumped neutral Sb donors in silicon has been obtained. Lasing with a wavelength of 58.2 μm from the intracenter 2p0→1s(T2:Γ8) transition has been realized under CO2 laser pumping at liquid helium temperature. The population inversion mechanism is based on the relatively long-living excited state, 2p0, leading to an accumulation of the photoexcited electrons.