A fully integrated class-E CMOS amplifier with a class-F driver stage

Abstract

This paper presents a fully integrated two-stage 1.9 GHz class-E amplifier, implemented by 0.18 /spl mu/m CMOS technologies. By using the switching operation mode of a class-E amplifier, the DC power dissipation can be reduced, and this amplifier delivers a 16.3 dBm output power at 1.9 GHz, with a maximum power-added efficiency (PAE) of 70% from a 2-V DC supply voltage. This monolithic amplifier includes the matching and biasing circuit, where no external components are required.