Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-enhanced chemical vapor deposition and their electrical properties

Abstract

We have succeeded in fabricating ultrafine carbon nanotube (CNT) via interconnects with SiOC interlayer dielectrics. High-quality multiwalled CNTs are grown in via holes with a diameter of 70 nm using pulse-excited remote plasma-enhanced chemical vapor deposition at 450degC. The resistance of a 70-nm-diameter CNT via is 52 Omega, which is the lowest ever reported for CNT via interconnects. The CNT via interconnect has the capability to sustain current density as high as 1times10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .